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SUD50P10-43
Vishay Siliconix
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SPECIFICATIONS (T J = 25 _ C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
D V DS /T J
D V GS(th) /T J
V GS = 0 V, I D = –250 m A
I D = –250 m A
–100
–105
7
V
mV/ _ C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = –250 m A
–2
–3
–4
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = " 20 V
V DS = –100 V, V GS = 0 V
V DS = –100 V, V GS = 0 V, T J = 55 _ C
V DS w 5 V, V GS = –10 V
–35
" 100
–1
–10
nA
m A
A
Drain-Source On-State Resistance a
Forward Transconductance a
r DS(on)
g fs
V GS = –10 V, I D = –9.4 A
V DS = –15 V, I D = –9.4 A
0.036
30
0.043
W
S
Dynamic b
Input Capacitance
C iss
5230
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
C oss
C rss
Q g
Q gs
Q gd
R g
t d(on)
V DS = –50 V, V GS = 0 V, f = 1 MHz
V DS = –50 V, V GS = –10 V, I D = –9.4 A
f = 1 MHz
230
165
105
21
29
4.1
30
160
50
pF
nC
W
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = –50 V, R L = 6.4 W
I D ^ –7.8 A, V GEN = –10 V, R g = 1 W
115
80
60
175
120
90
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I S
T C = 25 _ C
–50
Pulse Diode Forward Current a
I SM
–50
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = –7.8 A
I F = –7.8 A, di/dt = 100 A/ m s, T J = 25 _ C
–0.8
60
180
48
12
–1.2
90
270
V
ns
nC
ns
Notes
a. Pulse test; pulse width v 300 m s, duty cycle v 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
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